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High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate

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4 Author(s)
Hu, F.R. ; Department of Nanomechanics, Tohoku University, Sendai 980-8579, Japan ; Ochi, K. ; Zhao, Y. ; Hane, K.

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Column-crystallized InGaN/GaN quantum-well flower structure was deposited on pillared Si (111) substrate. Dotted GaN nuclei grew along the direction of the coming Ga and N atoms, forming arrays of InGaN/GaN quantum-well flower structure. Raman spectra measurement demonstrated that these crystals were fully relaxed. Photoluminescence measurement showed a room temperature peak position of 556 nm and two peak positions of 400 and 549 nm at low temperature. Hg lamp excited photoluminescence demonstrated a clear fluorescence distribution from the low to the top part of the flower structure and much stronger emission compared with the quantum-well crystals on the flat Si substrate.

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Applied Physics Letters  (Volume:89 ,  Issue: 17 )