By Topic

High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hu, F.R. ; Department of Nanomechanics, Tohoku University, Sendai 980-8579, Japan ; Ochi, K. ; Zhao, Y. ; Hane, K.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Column-crystallized InGaN/GaN quantum-well flower structure was deposited on pillared Si (111) substrate. Dotted GaN nuclei grew along the direction of the coming Ga and N atoms, forming arrays of InGaN/GaN quantum-well flower structure. Raman spectra measurement demonstrated that these crystals were fully relaxed. Photoluminescence measurement showed a room temperature peak position of 556 nm and two peak positions of 400 and 549 nm at low temperature. Hg lamp excited photoluminescence demonstrated a clear fluorescence distribution from the low to the top part of the flower structure and much stronger emission compared with the quantum-well crystals on the flat Si substrate.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 17 )