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Browse Journals & Magazines > Applied Physics Letters ...> Volume:89 Issue:16 Help

Enhancement of quantum well intermixing on InP/InGaAs/InGaAsP heterostructures using titanium oxide surface stressors to induce forced point defect diffusion

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5 Author(s)
Francois, A. ; Centre de Recherche en Nanofabrication et en Nanocaractérisation, Université de Sherbrooke, 2500 Boulevard de l’Université, Sherbrooke, Québec J1K 2R1, Canada ; Aimez, V. ; Beauvais, J. ; Gendry, M.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2364058 

Quantum well intermixing was studied on InP/InGaAs/InGaAsP heterostructures under stress induced by a TiOx surface stressor. Results provide a comparison of thermal emission wavelength shift and effective emission wavelength shift for samples intermixed with and without applied stress. It is shown that TiOx decreases the measured thermal shift depending on the amplitude of the induced stress. It is also shown that the diffusion of point defects created during ion implantation prior to TiOx stressor deposition is significantly enhanced. This results in an increase of the effective wavelength shift by up to 300%.

Published in:
Applied Physics Letters  (Volume:89 ,  Issue: 16 )

Date of Publication: Oct 2006

Page(s):
164107 - 164107-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2364058
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Oct 2006

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