By Topic

Localization of electrons in multiple layers of self-assembled GeSi/Si islands

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yakimov, A.I. ; Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prospekt Lavrent’eva 13, 630090 Novosibirsk, Russia ; Nikiforov, A.I. ; Dvurechenskii, A.V.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2358962 

Space-charge spectroscopy was employed to study the electronic structure of single and multiple layers of GeSi islands embedded in a n-type Si(001) matrix. For a multilayer sample, the evidence for an electron localization in strained Si in the vicinity of GeSi dots was found. From the admittance measurements the electron binding energy was determined to be 40–70 meV. The electron accumulation was not observed in a sample with a single layer of GeSi islands. Existence of localized electronic states is explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried GeSi dots.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 16 )