Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2360223
The lifetime of green phosphorescent light-emitting diodes was improved by using a graded doping structure in light-emitting layer. A green device with high doping concentration at the hole transport layer and light-emitting layer interface showed longer lifetime than a conventional device with uniform doping concentration for the whole light-emitting layer by more than 60%.