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Erratum: “Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics” [Appl. Phys. Lett. 89, 073510 (2006)]

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9 Author(s)
Sanghyun Ju ; School of Electrical and Computer Engineering, The Institute for Nanoelectronics and Computing, and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 ; Kangho Lee ; Janes, D.B. ; Dwivedi, Ramesh C.
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Applied Physics Letters  (Volume:89 ,  Issue: 13 )