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Admittance spectroscopy of polymer-nanoparticle nonvolatile memory devices

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5 Author(s)
Simon, D.T. ; Physics Department, University of California, Santa Cruz, 1156 High Street, Santa Cruz, California 95064 ; Griffo, M.S. ; DiPietro, R.A. ; Swanson, S.A.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2357560 

Nonvolatile resistive memory consisting of gold nanoparticles embedded in the conducting polymer poly(4-n-hexylphenyldiphenylamine) examined using admittance spectroscopy. The frequency dependence of the devices indicates space-charge-limited transport in the high-conductivity “on” state, as well as evidence for similar transport in the lower-conductivity “off” state. Furthermore, the larger dc capacitance of the on state indicates that a greater amount of filling of the midgap nanoparticle trap levels increases the overall device conductivity, leading to the memory effect.

Published in:
Applied Physics Letters  (Volume:89 ,  Issue: 13 )

Date of Publication: Sep 2006

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