Nonvolatile resistive memory consisting of gold nanoparticles embedded in the conducting polymer poly(4-n-hexylphenyldiphenylamine) examined using admittance spectroscopy. The frequency dependence of the devices indicates space-charge-limited transport in the high-conductivity “on” state, as well as evidence for similar transport in the lower-conductivity “off” state. Furthermore, the larger dc capacitance of the on state indicates that a greater amount of filling of the midgap nanoparticle trap levels increases the overall device conductivity, leading to the memory effect.
Published in:
Applied Physics Letters
(Volume:89
,
Issue:
13
)
Date of Publication:
Sep 2006
- Page(s):
-
133510
-
133510-3
- ISSN :
-
0003-6951
- Digital Object Identifier :
-
10.1063/1.2357560
- Product Type:
-
Journals & Magazines
- Date of Current Version :
-
18 June 2009
- Issue Date :
-
Sep 2006