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Two-dimensional electron gas in Zn polar ZnMgO/ZnO heterostructures grown by radical source molecular beam epitaxy

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8 Author(s)
Tampo, H. ; National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan ; Shibata, H. ; Matsubara, K. ; Yamada, A.
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A two-dimensional electron gas was observed in Zn polar ZnMgO/ZnO (ZnMgO on ZnO) heterostructures grown by radical source molecular beam epitaxy. The electron mobility of the ZnMgO/ZnO heterostructures dramatically increased with increasing Mg composition and the electron mobility (μ∼250 cm2/V s) at RT reached a value more than twice that of an undoped ZnO layer (μ∼100 cm2/V s). The carrier concentration in turn reached values as high as ∼1×1013 cm-2 and remained nearly constant regardless of Mg composition. Strong confinement of electrons at the ZnMgO/ZnO interface was confirmed by C-V measurements with a concentration of over 4×1019 cm-3. Temperature-dependent Hall measurements of ZnMgO/ZnO heterostructures also exhibited properties associated with well defined heterostructures. The Hall mobility increased monotonically with decreasing temperature, reaching a value of 2750 cm2/V s at 4 K. Zn polar “ZnMgO on ZnO” structures are easy to adapt to a top-gate device. These results open new possibilities for high electron mobility transistors based upon ZnO-based materials.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 13 )

Date of Publication:

Sep 2006

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