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Browse Journals & Magazines > Applied Physics Letters ...> Volume:89 Issue:13 Help

Growth and photoluminescence studies of Al-rich AlN/AlxGa1-xN quantum wells

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5 Author(s)
Al Tahtamouni, T.M. ; Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 ; Nepal, N. ; Lin, J.Y. ; Jiang, H.X.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2358107 

A set of AlN/AlxGa1-xN (x∼0.65) quantum wells (QWs) with well width Lw varying from 1 to 3 nm has been grown by metal organic chemical vapor deposition. Low temperature photoluminescence (PL) spectroscopy has been employed to study the Lw dependence of the PL spectral peak position, emission efficiency, and linewidth. These results have shown that these AlN/AlGaN QW structures exhibit polarization fields of ∼4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with Lw between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on Lw yielded a linear relationship. The implications of our results on deep ultraviolet optoelectronic device applications are also discussed.

Published in:
Applied Physics Letters  (Volume:89 ,  Issue: 13 )

Date of Publication: Sep 2006

Page(s):
131922 - 131922-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2358107
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Sep 2006

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