By Topic

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Schormann, J. ; Department of Physics, University of Paderborn, Warburger Strasse 100, D-33095 Paderborn, Germany ; Potthast, S. ; As, D.J. ; Lischka, K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2357587 

In this contribution the authors studied the optical properties of cubic AlxGa1-xN/GaN single and multiple quantum wells. The well widths ranged from 2.5 to 7.5 nm. Samples were grown by rf-plasma assisted molecular beam epitaxy on free standing 3C-SiC (001) substrates. During growth of Al0.15Ga0.85N/GaN quantum wells clear reflection high energy electron diffraction oscillations were observed indicating a two dimensional growth mode. They observe strong room temperature, ultraviolet photoluminescence at about 3.3 eV with a minimum linewidth of 90 meV. The peak energy of the emission versus well width is reproduced by a square-well Poisson-Schrödinger model calculation.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 13 )