By Topic

Thermal boundary conductance response to a change in Cr/Si interfacial properties

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Hopkins, Patrick E. ; Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904 ; Norris, Pamela M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2357585 

With continued size reduction in microelectronic devices, the boundary conductance between two materials becomes the main channel for thermal dissipation. While many efforts have been directed in studying this interfacial transport, these works have focused on the materials forming the boundary, not the boundary itself. This study focuses on the dependence of thermal boundary conductance on the properties of the region at the Cr/Si interface. The interfacial region of the Cr/Si samples is characterized with Auger electron spectroscopy depth profiling and the boundary conductance is measured with a pump-probe technique. Changes in interfacial properties are shown to significantly affect conductance.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 13 )