By Topic

Gain structure optimization of vertical external cavity surface emitting laser at 920 nm

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
10 Author(s)
Yoo, Jaeryung ; Photonics STU, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea ; Kisung Kim ; Lee, Sangmoon ; Lim, Seongjin
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2356327 

The authors have optimized a resonant gain structure of a 920 nm vertical external cavity surface emitting laser. They found that long saturated carrier lifetime in shallow quantum well (QW) under a high injection level restricted the laser performance. An insertion of nonabsorbing layer in the middle of barrier layers with multi-QWs was very effective to reduce the saturated carrier lifetime and, therefore, to enhance the laser performance. With the optimized gain structure, which had ten periods of triple InGaAs QWs with Al0.3Ga0.7As nonabsorbing layers in the middle of GaAs barriers, they achieved 4.9 W output power at 10 °C.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 13 )