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High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

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9 Author(s)
Yabuta, Hisato ; Canon Research Center, Canon Inc., 3-30-2 Shimomaruko, Ohta-ku, Tokyo 146-8501, Japan ; Sano, M. ; Abe, K. ; Aiba, T.
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Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. The conductivity of the a-IGZO films was controlled from ∼10-3 to 10-6 S cm-1 by varying the mixing ratio of sputtering gases, O2/(O2+Ar), from ∼3.1% to 3.7%. The top-gate-type TFTs operated in n-type enhancement mode with a field-effect mobility of 12 cm2 V-1 s-1, an on-off current ratio of ∼108, and a subthreshold gate voltage swing of 0.2 V decade-1. It is demonstrated that a-IGZO is an appropriate semiconductor material to produce high-mobility TFTs at low temperatures applicable to flexible substrates by a production-compatible means.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 11 )

Date of Publication:

Sep 2006

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