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Voltage drop in an (AlxGa1-x)0.5In0.5P light-emitting diode probed by Kelvin probe force microscopy

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5 Author(s)
Katzer, Kl.-D. ; Universität Duisburg-Essen, Bismarckstr. 81, D-47058 Duisburg, Germany ; Mertin, W. ; Bacher, G. ; Jaeger, A.
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The authors report on quantitative investigations of the voltage drop across the heterostructure layer sequence of an operating AlGaInP light-emitting diode via Kelvin probe force microscopy for different external biases between -2.0 and +1.86 V. In the low voltage regime, most of the voltage drops in the active layer. For bias voltages above +1.5 V, however, they found an additional voltage drop on the p side of the device, which reduces the power efficiency of the light-emitting diode.

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Applied Physics Letters  (Volume:89 ,  Issue: 10 )