By Topic

A 1.9 GHz low-voltage silicon bipolar receiver front-end for wireless personal communications systems

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Long, J.R. ; Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada ; Copeland, M.A.

A 1.9 GHz wireless receiver front-end (low-noise preamplifier and mixer) is described that incorporates monolithic microstrip transformers for significant improvements in performance compared to silicon broadband designs. Reactive feedback and coupling elements are used in place of resistors to lower the front-end noise figure through the reduction of resistor thermal noise, and this also allows both circuits to operate at supply voltages below 2 V. These circuits have been fabricated in a production 0.8 μm BiCMOS process that has a peak npn transistor transit frequency (fT) of 11 GHz. At a supply voltage of 1.9 V, the measured mixer input third-order intercept point is +2.3 dBm with a 10.9 dB single-sideband noise figure. Power dissipated by the mixer is less than 5 mW. The low-noise amplifier input intercept is -3 dBm with a 2.8 dB noise figure and 9.5 dB gain. Power dissipation of the preamplifier is less than 4 mW, again from a 1.9 V supply

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:30 ,  Issue: 12 )