Cart (Loading....) | Create Account
Close category search window
 

Thermal quenching mechanism of photoluminescence in 1.55 μm GaInNAsSb/Ga(N)As quantum-well structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Sun, H.D. ; Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow, G4 0NW, United Kingdom ; Calvez, S. ; Dawson, M.D. ; Gupta, J.A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2345240 

The authors report the temperature dependent photoluminescence characteristics of a series of GaInNAsSb/Ga(N)As double quantum wells which all emit at 1.5–1.55 μm at room temperature and whose design is such that the quantum wells have nominally identical valence band profiles but show different confinement depth in the conduction band. The photoluminescence quenching at high temperature demonstrates a thermal activation energy independent of the conduction band offset and can be most plausibly attributed to the unipolar thermalization of holes from the quantum wells to the barriers. This effect will intrinsically limit the flexibility of heterostructure design using GaInNAs(Sb), as it would for any other material system with small valence band offset.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 10 )

Date of Publication:

Sep 2006

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.