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A micromachined low-power temperature-regulated bandgap voltage reference

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3 Author(s)
R. J. Reay ; Center for Integrated Syst., Stanford Univ., CA, USA ; E. H. Klaassen ; G. T. A. Kovacs

A low-power, temperature-regulated bandgap voltage reference is demonstrated in a commercial CMOS process. Low-power operation is achieved by thermally isolating a small portion of the die using a single postprocess micromachining step requiring no extra masks or modifications to the CMOS process. The reference has a 53000° C/W thermal resistance, a 2.5 ms thermal time constant, and uses 1.5 mW at 25°C. Temperature regulation improves the temperature coefficient from 100 ppm/°C to 9 ppm/°C over 0-80°C

Published in:

IEEE Journal of Solid-State Circuits  (Volume:30 ,  Issue: 12 )