By Topic

Quantifying stoichiometry of mixed-cation-anion III-V semiconductor interfaces at atomic resolution

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Mahalingam, K. ; Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433 ; Eyink, K.G. ; Brown, G.J. ; Dorsey, D.L.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Employing the focal-series reconstruction technique in high-resolution transmission electron microscopy, we obtained true atomic resolution images of interfacial disorder within cation and anion sublattices across interfaces in an InGaSb/InAs heterostructure. This enabled independent quantitative mapping of changes in the InGa and AsSb contents across interfacial regions ∼0.6 nm in width. A comparison of the cation and anion sublattice images revealed that intermixing at the InGaSb-on-InAs interface is confined to the InGa sublattice. Also, atomic scale roughness within the AsSb sublattice of the InAs-on-InGaSb interface was discerned. This approach is general, permitting atomic-scale compositional analysis of heterointerfaces with two species per sublattice.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 9 )