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Improving work function tuning by preimplanting multiple dopants in Ni fully silicided gate

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2 Author(s)
Liu, J. ; Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, 10100 Burnet Road, Building 160, Austin, Texas 78758 ; Kwong, D.L.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2178212 

A suitable work function (4.29 eV) ideal for n-type transistor is realized by preimplanting multiple n-type dopants in Ni fully silicided gate. Flexible adjustments of work function in Si band gap are realized by coimplanting B with n-type dopants. Leakage current and long-term reliability are not degraded by preimplantation of multiple dopants in Ni fully silicided gate.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 8 )