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High-temperature operation of self-assembled GaInNAs/GaAsN quantum-dot lasers grown by solid-source molecular-beam epitaxy

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4 Author(s)
Liu, C.Y. ; School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798, Republic of Singapore ; Yoon, S.F. ; Sun, Z.Z. ; Yew, K.C.

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Self-assembled GaInNAs/GaAsN single layer quantum-dot (QD) lasers grown using solid-source molecular-beam epitaxy have been fabricated and characterized. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is ∼1.05 kA/cm2 from a GaInNAs QD laser (50×1700 μm2) at 10 °C. High-temperature operation up to 65 °C was also demonstrated from an unbonded GaInNAs QD laser (50×1060 μm2), with high characteristic temperature of 79.4 K in the temperature range of 10–60 °C.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 8 )

Date of Publication:

Feb 2006

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