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Browse Journals & Magazines > Applied Physics Letters ...> Volume:88 Issue:6 Help

Modulation of photoemission spectra of In2O3 nanowires by the variation in Zn doping level

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3 Author(s)
Hsin, C.L. ; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China ; He, J.H. ; Chen, L.J.

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The growth of In2O3 nanowires on Si substrate with different zinc doping levels has been achieved by a vapor transport and condensation method. The atomic percentage in doping level is approximately proportional to the weight of ZnO powder added in the source. The ultraviolet (UV) and green light photoemissions of the In2O3 nanowires are depressed and enhanced, respectively, with the doping level of Zn impurity. The UV and green light peaks are attributed to oxygen vacancy and zinc impurity energy levels. Similar tuning by other impurities can be expected and will be beneficial for possible optoelectronic applications.

Published in:
Applied Physics Letters  (Volume:88 ,  Issue: 6 )

Date of Publication: Feb 2006

Page(s):
063111 - 063111-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2172219
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Feb 2006

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