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Dielectric properties of <001>-oriented Ba0.6Sr0.4TiO3 thin films on polycrystalline metal tapes using biaxially oriented MgO/γ-Al2O3 buffer layers

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5 Author(s)
Choi, W. ; Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 ; Kang, B.S. ; Jia, Q.X. ; Matias, V.
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We report the growth of <001>-oriented Ba0.6Sr0.4TiO3 (BST) thin films on polycrystalline Ni-alloy tapes by pulsed laser deposition using biaxially oriented, ion-beam-assisted deposited (IBAD) MgO and γ-Al2O3 buffer layers. Dielectric constant values of our BST films were up to ∼85% of those in the epitaxial films prepared under similar conditions on single-crystal MgO substrates. No significant dispersion of the dielectric constant was observed for frequencies from 100 Hz to 1 MHz. These results demonstrate the versatility of using IBAD-textured MgO and γ-Al2O3 buffer layers to integrate highly oriented good-quality BST films with nonsingle-crystalline substrates.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 6 )

Date of Publication:

Feb 2006

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