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Doping concentration dependence of room-temperature ferromagnetism for Ni-doped ZnO thin films prepared by pulsed-laser deposition

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6 Author(s)
Liu, Xiaoxue ; Department of Physics, East China Normal University, Shanghai 200062, People’s Republic of China ; Lin, Fangting ; Sun, Linlin ; Cheng, Wenjuan
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High-quality Ni-doped ZnO thin films of single phase with preferred c-axis growth orientation were formed on Si (100) substrates by pulsed-laser deposition at room temperature. The films exhibited room-temperature ferromagnetic behaviors with saturation magnetic moment per Ni atom of 0.37μB,0.26μB,0.25μB and 0.21μB for the Ni concentration of 1, 3, 5, and 7 at. %, respectively. The decrease of ferromagnetism with doping concentration demonstrates that ferromagnetism observed at room temperature is an intrinsic property of Ni–ZnO thin films, not from any secondary phase.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 6 )

Date of Publication:

Feb 2006

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