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Browse Journals & Magazines > Applied Physics Letters ...> Volume:88 Issue:6 Help

Thermal stability improvement by using Pd/NiO/Al/Ti/Au reflective ohmic contacts to p-GaN for flip-chip ultraviolet light-emitting diodes

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5 Author(s)
Pan, Chang-Chi ; Optical Sciences Center and Department of Electrical Engineering, National Central University, Jhongli 32001, Taiwan, Republic of China ; Chen, Guan-Ting ; Hsu, Wen-Jay ; Lin, Chih-Wei
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The thermal stability, optical reflectivity, and contact resistivity of Pd/NiO/Al/Ti/Au ohmic contacts to p-type GaN were investigated. In contrast to Pd/Ni/Al/Ti/Au counterparts, the ohmic contacts Pd/NiO/Al/Ti/Au retained their specific contact resistivity (≪3.3×10-2 Ω cm2) and high reflectivity (≫75% @ 370 nm) after a long thermal aging at 200 °C for 100 h in nitrogen ambient. According to the results of the secondary ion mass spectroscopy in-depth profiles study, it is found that the NiO layer is more transparent and a better diffusion barrier than Ni to prevent the penetration of upper metals into p-type GaN during thermal treatment.

Published in:
Applied Physics Letters  (Volume:88 ,  Issue: 6 )

Date of Publication: Feb 2006

Page(s):
062113 - 062113-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2173245
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Feb 2006

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