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Semiconductor-laser-pumped high-power upconversion laser

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7 Author(s)
Heumann, Ernst ; Universität Hamburg, Institut für Laser-Physik, Luruper Chaussee 149, D-22761 Hamburg, Germany ; Bar, S. ; Rademaker, Katja ; Huber, G.
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A high-power optically pumped semiconductor laser operating around 970 nm has been used as a pumping source for an upconversion laser based on an Er3+ doped LiLuF4 crystal. Nearly 0.5 W of continuous wave (cw) output power and 0.8 W peak power at a 50% pump duty cycle could be achieved at a wavelength of 552 nm. This represents the highest output power from a room temperature upconversion laser ever reported. Laser threshold and slope efficiency were measured to be below 100 mW of absorbed pump power and 30%, respectively. This experiment could be an important step along the route to realizing a compact and efficient upconversion laser emitting in the Watt level power regime.

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Applied Physics Letters  (Volume:88 ,  Issue: 6 )