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Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides

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3 Author(s)
Becu, Stephane ; ST Microelectronics, 850 rue Jean Monnet, BP 16, 38926 Crolles Cedex, France ; Cremer, Sebastien ; Autran, J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2170137 

A microscopic model for metal-insulator-metal (MIM) capacitors with high permittivity metallic oxides is developed to determine the electric field dependence of dielectric constant. The model indicates that the metallic cation displacement in the tetrahedral cell is at the origin of the dielectric constant variations. The temperature dependence has also been included to compare the model with experiment and to give an indication of the reliability of the model. The experimental data that are compared to our model have been obtained from capacitance versus voltage (C-V) characterization on MIM capacitors with alumina as dielectric and TiN electrodes. The C-V curves have been performed at a frequency of 100 kHz for different temperatures ranging from 200 to 400 K.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 5 )

Date of Publication:

Jan 2006

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