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InSb/AlInSb quantum-well light-emitting diodes

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9 Author(s)
Nash, G.R. ; QinetiQ, Malvern Technology Centre, Malvern WR14 3PS, United Kingdom and Photonics Group, Department of Electrical and Electronic Engineering, Unversity of Bristol, Bristol BS8 1UB, United Kingdom ; Haigh, M.K. ; Hardaway, H.R. ; Buckle, L.
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We have investigated the room-temperature electroluminescent properties of InSb/AlxIn1-xSb quantum-well light-emitting diodes. The maximum emission from diodes containing quantum wells occurred at significantly higher energies than the band gap of InSb. Close agreement between experimental and theoretical data confirms that recombination occurs within the quantum well.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 5 )

Date of Publication:

Jan 2006

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