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Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high electron mobility transistor characteristics

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5 Author(s)
Nanjo, T. ; Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan ; Oishi, T. ; Suita, Muneyoshi ; Abe, Yuji
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To improve an AlGaN/GaN high electron mobility transistor, an Al layer as thin as 3 nm was inserted between the AlGaN barrier layer and the gate contact. At our preceded experiments on Schottky diodes, we confirmed significant improvement in capacitance-gate voltage characteristics especially at a low frequency as well as drastic reduction in gate leakage current, which should be interpreted in terms of decrease in oxygen-related trap density at the AlGaN surface. As a result of the trap reduction, the transistor indicates marked improvement of current collapse with no degradation in transconductance.

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Applied Physics Letters  (Volume:88 ,  Issue: 4 )