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Growth of silicon bump induced by swift heavy ion at the silicon oxide-silicon interface

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7 Author(s)
Carlotti, J.-F. ; CEM2, UMR-CNRS 5507, cc083, Université de Montpellier 2, 34095 Montpellier cedex 5, France ; Touboul, A.D. ; Ramonda, M. ; Caussanel, M.
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Thin silicon oxide layers on silicon substrates are investigated by scanning probe microscopy before and after irradiation with 210 MeV Au+ ions. After irradiation and complete chemical etching of the silicon oxide layer, silicon bumps grown on the silicon surface are observed. It is shown that each impinging ion induces one silicon bump at the interface. This observation is consistent with the thermal spike theory. Ion energy loss is transferred to the oxide and induces local melting. Silicon-bump formation is favored when the oxide and oxide-silicon interface are silicon rich.

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Applied Physics Letters  (Volume:88 ,  Issue: 4 )