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Pulsed- and continuous-mode operation at high temperature of strained quantum-cascade lasers grown by metalorganic vapor phase epitaxy

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9 Author(s)
Diehl, L. ; Harvard University, Division of Engineering and Applied Science, Cruft Laboratory 310, 19 Oxford Street, Cambridge, Massachusetts 02138 ; Bour, D. ; Corzine, S. ; Zhu, J.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2166206 

We present the pulsed operation at room temperature of different strained InGaAs/AlInAs quantum-cascade lasers grown by low-pressure metalorganic vapor-phase epitaxy. Devices based on a bound-to-continuum transition design have threshold current densities in pulsed mode as low as 1.84 kA/cm2 at 300 K. Identical lasers grown at higher rate (0.5 nm/s) also have threshold current densities lower than 2 kA/cm2 at 300 K. Buried heterostructure lasers based on a double phonon resonance design were operated in continuous mode up to 280 K. Overall, the performance obtained from strained quantum cascade lasers deposited by metalorganic vapor-phase epitaxy are comparable with that of similar structures grown by molecular beam epitaxy.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 4 )

Date of Publication:

Jan 2006

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