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Quantum dot formation and dynamic scaling behavior of SnO2 nanocrystals induced by pulsed delivery

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3 Author(s)
Chen, Z.W. ; Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong, People’s Republic of China ; Lai, J.K.L. ; Shek, C.H.

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Quantum dot formation and dynamic scaling behavior of SnO2 nanocrystals in coalescence regime for growth by pulsed-laser deposition is explored experimentally and theoretically, and the same is compared with that for continuous vapor deposition such as molecular-beam epitaxy. Using high-resolution transmission electron microscopy, unusual quantum dots of SnO2 nanocrystals are studied. We present kinetic Monte-Carlo simulations for pulsed-laser deposition in the submonolayer regime and give a description of the island distance versus pulse intensity. We found that the scaling exponent for pulsed-laser deposition is 1.28±0.03, which is significantly lower as compared to that for molecular-beam epitaxy (1.62±0.03). Theoretical simulations reveal that this attractive difference can be pursued to the large fraction of multiple droplet coalescence under pulsed vapor delivery.

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Applied Physics Letters  (Volume:88 ,  Issue: 3 )