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Passivation of boron emitters on n-type silicon by plasma-enhanced chemical vapor deposited silicon nitride

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3 Author(s)
Chen, Florence W. ; Centre of Excellence for Advanced Silicon Photovoltaics and Photonics, The University of New South Wales, Sydney, New South Wales 2052, Australia ; Li, Tsu-Tsung A. ; Cotter, Jeffrey E.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2217167 

A well-passivated emitter is crucial to making high efficiency solar cells. With several reported potential benefits in using n-type silicon compared to p-type silicon for solar cell applications, there is a need to investigate silicon nitride passivation on boron-diffused emitters. The passivation of plasma-enhanced chemical vapor deposited silicon nitride with different refractive indices on a variety of boron doping profiles on 1 Ω cm, float zoned, n-type silicon is studied. Contrary to the general perceptions that silicon nitride provides relatively poor passivation on boron-diffused surfaces, our results show that for some diffusion sheet resistances and with sufficient annealing, silicon nitride can be particularly well suited for passivating boron emitters. One-sun implied open circuit voltages of 663 and 718 mV and dark saturation current densities of 25 and 13 fA/cm2 per side are achieved by silicon nitride passivation on moderately doped boron emitters (100 Ω/sq) and lightly doped boron emitters (240 Ω/sq), respectively.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 26 )

Date of Publication:

Jun 2006

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