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High tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy Co2Cr0.6Fe0.4Al thin film

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5 Author(s)
Marukame, Takao ; Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, N14, W9, Kita-ku, Sapporo 060-0814, Japan ; Ishikawa, Takayuki ; Matsuda, Ken-ichi ; Uemura, Tetsuya
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Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film, whose composition was close to the stoichiometric one, and a MgO tunnel barrier. Cross-sectional high-resolution transmission electron microscope observations indicated that all layers of the CCFA/MgO/Co50Fe50 MTJ layer structure were grown epitaxially and were single crystalline. The microfabricated CCFA/MgO/Co50Fe50 MTJs exhibited high tunnel magnetoresistance (TMR) ratios of 90% at room temperature and 240% at 4.2 K. A high tunneling spin polarization of 0.79 at 4.2 K was obtained for the epitaxial CCFA films from the TMR ratios.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 26 )

Date of Publication:

Jun 2006

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