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Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate

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5 Author(s)
Wan, Keshu ; Ceramic Physics Laboratory, Kyoto Institute of Technology, Sakyo-ku, Matsugasaki, 606-8585 Kyoto, Japan and Research Institute for Nanoscience, Kyoto Institute of Technology, Sakyo-ku, Matsugasaki, 606-8585 Kyoto, Japan ; Porporati, Alessandro Alan ; Feng, Gan ; Yang, Hui
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The biaxial piezospectroscopic coefficient (i.e., the rate of spectral shift with stress) of the electrostimulated near-band-gap luminescence of gallium nitride (GaN) was determined as Π=-25.8±0.2 meV/GPa. A controlled biaxial stress field was applied on a hexagonal GaN film, epitaxially grown on (0001) sapphire using a ball-on-ring biaxial bending jig, and the spectral shift of the electrostimulated near-band-gap was measured in situ in the scanning electron microscope. This calibration method can be useful to overcome the lack of a bulk crystal of relatively large size for more conventional uniaxial bending calibrations, which has so far hampered the precise determination of the piezospectroscopic coefficient of GaN. The main source of error involved with the present calibration method is represented by the selection of appropriate values for the elastic stiffness constants of both film and substrate. The ball-on-ring calibration method can be generally applied to directly determine the biaxial-stress dependence of selected cathodoluminescence bands of epilayer/substrate materials without requiring separation of the film from the substrate.

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Applied Physics Letters  (Volume:88 ,  Issue: 25 )