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Growth of high-quality GaAs on Ge/Si1-xGex on nanostructured silicon substrates

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4 Author(s)
Vanamu, G. ; Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, New Mexico 87131 and Center for Micro-Engineered Materials, University of New Mexico, Albuquerque, New Mexico 87131 ; Datye, A.K. ; Dawson, R. ; Zaidi, Saleem H.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2214145 

Heteroepitaxial growth of GaAs/Ge/SiGe films on submicrostructured Si substrates is reported. One-dimensional, nanometer-linewidth, submicrometer period features were fabricated in Si substrates using interferometric lithography, reactive ion etching, and wet-chemical etching techniques. The quality of the GaAs layers grown on these structures was investigated using high-resolution x-ray diffraction, transmission electron microscopy, scanning electron microscopy, photoluminescence, and etch pit density measurements. The defect density of GaAs epilayers grown on submicrostructured Si at ∼6×105 cm-2 was two orders of magnitude lower compared with that grown on planar silicon. The optical quality of the GaAs/Ge/SiGe on submicrostructured Si was comparable to that of single crystal GaAs.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 25 )