Cart (Loading....) | Create Account
Close category search window
 

Microscopic structures of MgO barrier layers in single-crystal Fe/MgO/Fe magnetic tunnel junctions showing giant tunneling magnetoresistance

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2213953 

The microscopic structures of MgO(001) barrier layers in magnetic tunnel junctions showing giant tunneling magnetoresistance were characterized by in situ scanning tunneling microscopy. The MgO thin films formed exceedingly flat surfaces, and their terraces were made even flatter by annealing after deposition. This flattening of MgO surfaces apparently promotes coherent transport of electrons, which should enhance the tunneling magnetoresistance ratio. Local tunneling spectroscopy revealed that an annealed MgO layer has a critical thickness between 3 and 5 ML (monolayer), and a continuous film without pinholes can be formed over the thickness.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 25 )

Date of Publication:

Jun 2006

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.