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Model verification for a high-power-efficiency AlGaAs-GaAs HBT

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5 Author(s)
F. Deshours ; Dept. Commun., ENST, Paris, France ; E. Bergeault ; G. Berghoff ; C. Pinatel
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Heterojunction bipolar transistors (HBT's) with 2700 μm2 of emitter area are characterized for model verification using an active load-pull measurement system. The simulation and measurement results (up to 26 dBm) are reported and compared in terms of output power level and power-added efficiency under variable operating conditions. These measurements are performed with the aim of designing power amplifiers for mobile communications.

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IEEE Microwave and Guided Wave Letters  (Volume:6 ,  Issue: 1 )