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High-efficiency GaInP/GaAs HBT MMIC power amplifier with up to 9 W output power at 10 GHz

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5 Author(s)
K. Riepe ; Res. Center, Daimler-Benz AG, Ulm, Germany ; H. Leier ; U. Seiler ; A. Marten
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Monolithic power amplifiers using adequately ballasted high-efficiency GaInP/GaAs heterojunction bipolar transistors (HBT's) have been designed, fabricated, and tested. A maximum output power of 9 W with a power-added efficiency (PAE) of 42% and peak power-added efficiencies of 45% have been achieved at 10 GHz under critical long pulse conditions (pulse width=100 μs, duty cycle=10%). To our knowledge these results represent the best performance of any GaInP/GaAs HBT MMIC power amplifier considering efficiency, output power, operation frequency, and pulse conditions.

Published in:

IEEE Microwave and Guided Wave Letters  (Volume:6 ,  Issue: 1 )