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High tolerance to total ionizing dose of Ω-shaped gate field-effect transistors

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6 Author(s)
Gaillardin, M. ; IMEP, ENSERG, BP 257, 38016 Grenoble Cedex 1, France ; Paillet, P. ; Ferlet-Cavrois, Veronique ; Cristoloveanu, S.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2206097 

Ionizing radiation effects are investigated in N-channel metal-oxide-semiconductor triple-gate field-effect transistors with Ω-shaped gate fin field-effect transistor (FinFET) architecture. The total dose response is shown to be dependent on device geometry. A wide FinFET structure behaves like a single-gate fully depleted silicon-on-insulator transistor, showing a noticeable degradation induced by ionizing radiation. By contrast, an optimized narrow FinFET shows a drastically reduced influence of ionizing radiation thanks to the efficient electrostatic control of the potential in the device provided by the Ω gate. A narrow FinFET is shown to be naturally tolerant to a significant total dose exposure.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 22 )

Date of Publication:

May 2006

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