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Browse Journals & Magazines > Applied Physics Letters ...> Volume:88 Issue:22 Help

Performance enhancement of composition-graded-base type-II InP/GaAsSb double-heterojunction bipolar transistors with fT≫500 GHz

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5 Author(s)
Snodgrass, William ; Department of Electrical and Computer Engineering, University of Illinois at Urbana–Champaign, 1406 West Green Street, Urbana, Illinois 61801 ; Bing-Ruey Wu ; Hafez, W. ; Cheng, K.Y.
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The high frequency performance of type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with compositionally graded and uniform 25 nm base layers and 65 nm InP collectors is investigated. The graded base DHBT achieves a peak current gain of 20.5 compared to 14.9 for the uniform base DHBT at current densities near 15 mA/μm2. The peak fT of a graded base device with 0.38×8 μm2 emitter dimensions improves from 505 GHz at 25 °C to 535 GHz at -55 °C as determined by -20 dB/decade extrapolation. The base grading has reduced the total transit time by 25% compared to the uniform base type-II DHBT.

Published in:
Applied Physics Letters  (Volume:88 ,  Issue: 22 )

Date of Publication: May 2006

Page(s):
222101 - 222101-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2207843
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
May 2006

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