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ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3 gate insulators

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4 Author(s)
Siddiqui, J. ; Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122 ; Cagin, E. ; Chen, D. ; Phillips, J.D.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2204574 

The electrical characteristics of ZnO thin-film transistors with high-k (Ba,Sr)TiO3 gate dielectrics are presented. The ZnO and (Ba,Sr)TiO3 thin films were deposited on Pt, exhibiting polycrystalline characteristics. The thin-film devices demonstrated transistor behavior over the range of 0–10 V with a stable threshold voltage of approximately 1.2 V. The field effect mobility, subthreshold slope, and on/off ratio were measured to be 2.3 cm2 V-1 s-1, 0.25 V/decade, and 1.5×108, respectively. The measured transistor performance characteristics suggest that ZnO/(Ba,Sr)TiO3 structures are well suited for both polycrystalline thin-film transistors for display applications and future higher performance transistors based on single crystal ZnO.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 21 )

Date of Publication:

May 2006

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