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Ultralow resistance Si-containing Ti/Al/Mo/Au Ohmic contacts with large processing window for AlGaN/GaN heterostructures

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3 Author(s)
Mohammed, Fitih M. ; Micro and Nanotechnology Laboratory, Department of Materials Science and Engineering, and Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, Urbana, Illinois 61801 ; Wang, Liang ; Adesida, Ilesanmi

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2206127 

We report on the electrical and microstructural characterization of Si-containing Ti/Al/Mo/Au contacts for AlGaN/GaN heterostructures. Excellent Ohmic contact formation with contact resistance and specific contact resistivity as low as 0.12 Ω mm and 3.8×10-7 Ω cm2, respectively, have been obtained by the optimization of Si distribution in the metallization. The presence of Si strongly affects the Ohmic performance and microstructural makeup of the annealed contacts. Greater enhancement in Ohmic performance is achieved when optimized amount of Si is dispersed throughout the metallization.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 21 )

Date of Publication:

May 2006

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