IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Applied Physics Letters ...> Volume:88 Issue:21 Help

Ultralow resistance Si-containing Ti/Al/Mo/Au Ohmic contacts with large processing window for AlGaN/GaN heterostructures

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Mohammed, Fitih M. ; Micro and Nanotechnology Laboratory, Department of Materials Science and Engineering, and Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, Urbana, Illinois 61801 ; Wang, Liang ; Adesida, Ilesanmi

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2206127 

We report on the electrical and microstructural characterization of Si-containing Ti/Al/Mo/Au contacts for AlGaN/GaN heterostructures. Excellent Ohmic contact formation with contact resistance and specific contact resistivity as low as 0.12 Ω mm and 3.8×10-7 Ω cm2, respectively, have been obtained by the optimization of Si distribution in the metallization. The presence of Si strongly affects the Ohmic performance and microstructural makeup of the annealed contacts. Greater enhancement in Ohmic performance is achieved when optimized amount of Si is dispersed throughout the metallization.

Published in:
Applied Physics Letters  (Volume:88 ,  Issue: 21 )

Date of Publication: May 2006

Page(s):
212107 - 212107-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2206127
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
May 2006

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.