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Quasi-one-dimensional quantum well on Si(100) surface crafted by using scanning tunneling microscopy tip

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2 Author(s)
Sagisaka, Keisuke ; Advanced Nano Characterization Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan ; Fujita, Daisuke

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2204762 

We fabricated quasi-one-dimensional (1D) quantum wells on the Si(100) surface by using a scanning tunneling microscopy (STM) tip. Electron waves were confined to a single silicon dimer row by two tungsten nanodots that were separated by several nanometers. The tungsten dots were deposited by point contact between the STM tip and the sample. The size of the dots we created on the Si(100) surface was as small as the width of a single dimer. Differential conductance mapping and scanning tunneling spectroscopy detected different quantum states confined to the quasi-1D quantum well as changing bias voltage.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 20 )

Date of Publication:

May 2006

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