Cart (Loading....) | Create Account
Close category search window

Quasi-one-dimensional quantum well on Si(100) surface crafted by using scanning tunneling microscopy tip

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Sagisaka, Keisuke ; Advanced Nano Characterization Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan ; Fujita, Daisuke

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We fabricated quasi-one-dimensional (1D) quantum wells on the Si(100) surface by using a scanning tunneling microscopy (STM) tip. Electron waves were confined to a single silicon dimer row by two tungsten nanodots that were separated by several nanometers. The tungsten dots were deposited by point contact between the STM tip and the sample. The size of the dots we created on the Si(100) surface was as small as the width of a single dimer. Differential conductance mapping and scanning tunneling spectroscopy detected different quantum states confined to the quasi-1D quantum well as changing bias voltage.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 20 )

Date of Publication:

May 2006

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.