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1.54 μm Si:Er light emitting diode with memory function

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6 Author(s)
Andreev, B.A. ; Institute for Physics of Microstructures, RAS, GSP 105, Nizhny Novgorod 603950, Russia ; Krasilnik, Z.F. ; Kryzhkov, D.I. ; Kuznetsov, V.P.
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We report a memory effect in electroluminescence of Er-doped silicon light emitting diodes: applying a voltage pulse in reverse-bias direction below breakdown we observe 1.54 μm emission only, if a forward pulse was issued before. This effect occurs for temperatures T≤120 K in sublimation molecular-beam epitaxy grown structures. This finding opens perspectives for the development of a fully complementary metal-oxide-semiconductor compatible electro-optical converter with a memory function, operating in the 1.5 μm telecommunication band. Such an element could find numerous applications in telecommunication and silicon photonics and optoelectronics circuitry.

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Applied Physics Letters  (Volume:88 ,  Issue: 20 )