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Formation of (111) nanotwin lamellae hillocks in polycrystalline silicon thin films caused by deposition of silicon dioxide layer

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2 Author(s)
Imai, S. ; System Solutions Planning Department, Electronic Components & Devices, Sharp Corporation, 2613-1, Ichinomoto-cho, Tenri, Nara 632-8567, Japan ; Fujimoto, Masayuki

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Plasma-enhanced chemical vapor deposition was used to deposit layers of tetraethylorthosilicate at different temperatures. In the case of low-temperature deposition (300 °C), the deposited film surface was smooth and the major surface defects of the polycrystalline silicon (poly-silicon) film surface were grooves of grain boundaries. In contrast, in the case of high-temperature deposition (500 °C), the deposited silicon oxide surface exhibited hillocks, and these hillocks were derived from the top end of inclined silicon (111) where protruding nanotwin lamellae penetrated the poly-silicon thin film. The observed hillocks stemming from nanotwin lamellae could have been formed by compressive stress during high-temperature silicon dioxide deposition.

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Applied Physics Letters  (Volume:88 ,  Issue: 2 )