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Kinetics of strain relaxation in Si1-xGex thin films on Si(100) substrates: Modeling and comparison with experiments

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4 Author(s)
Kolluri, Kedarnath ; Department of Chemical Engineering, University of Massachusetts, Amherst, Massachusetts 01003-3110 ; Zepeda-Ruiz, Luis A. ; Murthy, Cheruvu S. ; Maroudas, Dimitrios

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We report the results of a theoretical analysis for the kinetics of strain relaxation in Si1-xGex thin films grown epitaxially on Si(100) substrates. The analysis is based on a properly parametrized dislocation mean-field theoretical model describing plastic deformation dynamics due to threading dislocation propagation and addresses strain relaxation kinetics during both epitaxial growth and thermal annealing, including post-implantation annealing. Theoretical predictions for strain relaxation as a function of film thickness in Si0.80Ge0.20/Si(100) samples annealed after epitaxial growth either unimplanted or after He ion implantation are in excellent agreement with experimental measurements [J. Cai etal, J. Appl. Phys. 95, 5347 (2004)].

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 2 )