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GaN full-vertical p-i-n rectifiers employing AlGaN:Si conducting buffer layers on n-SiC substrates

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5 Author(s)
Yoo, D. ; Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 ; Limb, J. ; Ryou, J.-H. ; Lee, W.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2201554 

The development of a full-vertical GaN p-i-n rectifier on a 6H n-type SiC substrate by employing a conducting AlxGa1-xN:Si (x=∼0.1) buffer layer scheme is reported. In this vertical configuration, the n contact is made on the backside of the SiC substrate using a Ni/Au metallization scheme. Epitaxial layers are grown by low-pressure metal organic chemical vapor deposition. The AlxGa1-xN:Si nucleation layer is proven to provide excellent electrical properties while also acting as a good buffer layer for subsequent GaN growth. The reverse breakdown voltage for a relatively thin 2.5 μm thick i region was found to be over -330 V. The devices also show a low on resistance of Ron of 7.5×10-3 Ω cm2. This full-vertical configuration provides the advantage of the reduction of sidewall damage from plasma etching and lower forward resistance due to the reduction of current crowding in the bottom n-type layer.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 19 )

Date of Publication:

May 2006

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