Referenced Items are not available for this document.
A high-efficiency C-Band power amplifier design utilizing AIGaAs/InGaAs/GaAs pHEMT's is reported. On-wafer active loadpull power measurements at 4.5 GHz of a 0.25μm x 1.2 mm pHEMT exhibited an output power of 0.35 W and power-added efficiency of 79%. A singlestage MIC amplifier fabricated with a 2.8-mm-wide pHEMT resulted in P/sub out/ = 1.2 W and PAE = 74% at 4 GHz. These results demonstrate the potential of pHEMT's to significantly improve the efficiency performance of microwave solid state power amplifiers compared to present MESFET designs.
Published in:
Microwave and Guided Wave Letters, IEEE
(Volume:6
,
Issue:
2
)
Date of Publication: Feb. 1996
- ISSN :
- 1051-8207
- INSPEC Accession Number:
- 5193138
- Digital Object Identifier :
- 10.1109/75.481999
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb. 1996
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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