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Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe

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4 Author(s)
Talanov, Vladimir V. ; Neocera, Inc., 10000 Virginia Manor Road, Beltsville, Maryland 20705 ; Scherz, Andre ; Moreland, Robert L. ; Schwartz, Andrew R.

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We present a method for noncontact, noninvasive measurements of dielectric constant k of 100-nm- to 1.5-μm-thick blanket low-k interconnect films on up to 300 mm in diameter wafers. The method has about 10 μm sampling spot size, and provides ≪0.3% precision and ±2% accuracy for k value. It is based on a microfabricated near-field scanned microwave probe formed by a 4 GHz parallel strip transmission line resonator tapered down to a few micron tip size.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 19 )