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Surface electronic structure in transition-metal (Cr and Mn) doped GaAs (001) studied by in situ photoemission spectroscopy

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5 Author(s)
Kanai, K. ; Department of Applied Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan ; Okabayashi, J. ; Toyoda, S. ; Oshima, M.
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As 3d and Ga 3d photoemission spectra were probed in order to investigate the surface states in transition-metal doped GaAs (001) as spintronics materials. The growth mechanism and chemical bonding states at the surface of III–V-based diluted magnetic semiconductors, Ga1-xMnxAs and Ga1-xCrxAs, have been investigated by angular-dependent in situ photoemission spectroscopy. On low-temperature GaAs grown at 200 °C, the difference in core-level photoemission spectra of Ga1-xMnxAs and Ga1-xCrxAs is well related to that in the reflection high-energy electron-diffraction patterns, suggesting that not only As ions but also Ga ions are modulated in Ga1-xMnxAs.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 19 )

Date of Publication:

May 2006

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