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Kinetic Monte Carlo simulations of B diffusion and activation in preamorphized Si during annealing after solid phase epitaxial regrowth have been used to provide insight into the mechanisms that drive these phenomena. Simulations show that the presence of an initially high active B concentration along with a Si interstitial supersaturation set by end of range defects leads to simultaneous B deactivation and uphill diffusion through the capture of mobile interstitial B in the high concentration region during subsequent anneal treatments. Once the Si interstitial supersaturation decays close to equilibrium values, B clusters dissolve and emitted B diffuses downhill, following the B concentration gradient. The active B concentration at the minimum state of activation becomes higher as the annealing temperature increases as a consequence of a faster increase of the B cluster dissolution rate compared with the formation rate.